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A time-domain analysis of dipolar effects in copper phthalocyanine thin films on indium-tin-oxide substratesTHURZO, I; PHAM, G; ZAHN, D. R. T et al.Semiconductor science and technology. 2004, Vol 19, Num 9, pp 1075-1080, issn 0268-1242, 6 p.Article

Analysis of charge transient spectroscopy data originating from Gaussian densities of electron states in organicsTHURZO, I; MENDEZ, H; ZAHN, D. R. T et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 10, pp 1994-2007, issn 0031-8965, 14 p.Article

Dielectric relaxation in a hybrid Ag/DiMe-PTCDI/GaAs deviceTHURZO, I; MENDEZ, H; ZAHN, D. R. T et al.Journal of non-crystalline solids. 2005, Vol 351, Num 24-26, pp 2003-2008, issn 0022-3093, 6 p.Article

Analysis of the phase signal in reflection anisotropy spectroscopyDIETRICH, W; VON DER EMDE, M; ZAHN, D. R. T et al.Semiconductor science and technology. 1995, Vol 10, Num 8, pp 1108-1112, issn 0268-1242Article

Experimental evidence for complementary spatial sensitivities of capacitance and charge deep-level transient spectroscopiesTHURZO, I; BEYER, R; ZAHN, D. R. T et al.Semiconductor science and technology. 2000, Vol 15, Num 4, pp 378-385, issn 0268-1242Article

Electrical in situ characterisation of c-CdS/InP(110) heterostructuresSCHULTZ, C; VON DER EMDE, M; ZAHN, D. R. T et al.Physica status solidi. A. Applied research. 1994, Vol 145, Num 2, pp 497-502, issn 0031-8965Article

Raman monitoring of wide bandgap MBE growthZAHN, D. R. T.Applied surface science. 1998, Vol 123-24, pp 276-282, issn 0169-4332Conference Paper

Anisotropic dynamic response of pentacene single crystalsSCHUSTER, R; KNUPFER, M; ZAHN, D. R. T et al.The European physical journal. B, Condensed matter physics. 2007, Vol 59, Num 1, pp 25-28, issn 1434-6028, 4 p.Article

Vibrational spectroscopy of bulk and supported manganese oxidesBUCIUMAN, F; PATCAS, F; CRACIUN, R et al.PCCP. Physical chemistry chemical physics (Print). 1999, Vol 1, Num 1, pp 185-190, issn 1463-9076Article

Charge deep-level transient spectroscopy of Al/intrinsic diamond/p⁺-Si Schottky diodesTHURZO, I; ZAHN, D. R. T; DUA, A. K et al.Semiconductor science and technology. 2001, Vol 16, Num 7, pp 527-533, issn 0268-1242Article

Monitoring heteroepitaxial growth of ZnSe on GaAs by Raman spectroscopyDREWS, D; LANGER, M; RICHTER, W et al.Physica status solidi. A. Applied research. 1994, Vol 145, Num 2, pp 491-496, issn 0031-8965Article

Violation of the rate-window concept in the charge deep-level transient spectroscopy using second-order filteringTHURZO, I; ZAHN, D. R. T; DUA, A. K et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp 461-464, issn 0268-1242Article

Inhomogeneous transport property of Alq₃ thin films : Local order or phase separation?THURZO, I; MENDEZ, H; IACOVITA, C et al.Synthetic metals. 2006, Vol 156, Num 16-17, pp 1108-1117, issn 0379-6779, 10 p.Article

Magnetic field influence on the molecular alignment of vanadyl phthalocyanine thin filmsKOLOTOVSKA, V; FRIEDRICH, M; ZAHN, D. R. T et al.Journal of crystal growth. 2006, Vol 291, Num 1, pp 166-174, issn 0022-0248, 9 p.Article

PTCDA film formation on Si(111):H-1 × 1 surface : total current spectroscopy monitoringMOROZOV, A. O; KAMPEN, T. U; ZAHN, D. R. T et al.Surface science. 2000, Vol 446, Num 3, pp 193-198, issn 0039-6028Article

Experimental analysis of the thermal annealing of hard a-C:H filmsPETER, S; GÜNTHER, M; GORDAN, O et al.Diamond and related materials. 2014, Vol 45, pp 43-57, issn 0925-9635, 15 p.Article

Infrared spectroscopic investigations of the buried interface in silicon bonded wafersHIMCINSCHI, C; FRIEDRICH, M; HILLER, K et al.Semiconductor science and technology. 2004, Vol 19, Num 5, pp 579-585, issn 0268-1242, 7 p.Article

An optical investigation of diamond thin films on siliconOKANO, K; KUROSU, T; IIDA, M et al.Vacuum. 1990, Vol 41, Num 4-6, pp 1387-1389, issn 0042-207X, 3 p.Conference Paper

Growth peculiarities during vapor-liquid-solid growth of silicon nanowhiskers by electron-beam evaporation : Semiconductor nanowiresSIVAKOV, V; ANDRÄ, G; HIMCINSCHI, C et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 85, Num 3, pp 311-315, issn 0947-8396, 5 p.Article

Field effect of fixed negative charges on oxidized silicon induced by AlF₃ layers with fluorine deficiencyKÖNIG, D; ZAHN, D. R. T; EBEST, G et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 222-227, issn 0169-4332, 6 p.Conference Paper

Structure of nitrogenated amorphous carbon films from NEXAFSBHATTACHARYYA, Somnath; LÜBBE, M; BRESSLER, P. R et al.Diamond and related materials. 2002, Vol 11, Num 1, pp 8-15, issn 0925-9635Article

Simulation of linear optical losses of absorbing heterogeneous thin solid filmsSTENZEL, O; LEBEDEV, A. N; SCHREIBER, M et al.Thin solid films. 2000, Vol 372, Num 1-2, pp 200-208, issn 0040-6090Article

Influence of sulfur on the Sb-GaAs(001) interfaceHOHENECKER, S; KAMPEN, T. U; BRAUN, W et al.Surface science. 1999, Vol 433-35, pp 347-351, issn 0039-6028Article

Optical properties of nitrogen-rich carbon films deposited by d.c. magnetron sputteringFRIEDRICH, M; WELZEL, T; ROCHOTZKI, R et al.Diamond and related materials. 1997, Vol 6, Num 1, pp 33-40, issn 0925-9635Article